D1009UKの購入情報と機能
| この部品の機能は「METAL GATE RF SILICON FET」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| D1009UK Gate | METAL GATE RF SILICON FET TetraFET
D1009UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
B
G (typ)
2 1
H D
3
P (2 pls) A
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W 28V 500MH- PUSH PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
E (4 pls) F I
N
M
O
J
K
SUITABLE FOR BROAD BAND APPLICATIONS
D |
Seme LAB |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| D10PF06 | STD10PF06 STD10PF06
P-CHANNEL 60V - 0.18 Ω - 10A IPAK, DPAK STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD10PF06
60 V < 0.20 Ω 10 A
s TYPICAL RDS(on) = 0.18 Ω s EXCEPTIONAL dv, dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE s APPLICATION ORIENTED
CHARACTERIZATION s THROUGH-HOLE IPA |
 STMicroelectronics |
|
| D1071 | 450V / NPN Power Transistor, 2SD1071 1. High D.C. current gain 2. Low saturation voltage 3. High reliability 4. Audio power amplifiers 5. Relay & solenoid drivers 6. Motor controls 7. General purpose power amplifiers 8. Including zener diode |
 Fuji |
|
| D1005 | METAL GATE RF SILICON FET TetraFET
D1005UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W 28V 175MH- SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NO |
Seme LAB |
|
| D1088 | 250V, 6A, NPN Transistor, 2SD1088 ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications |
 SavantIC |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|