CBSL15の購入情報と機能

Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings

CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G H I L F C B 2XØ.130 FEATURES: Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 2.4 A DIM MINIMUM inches ,

CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R (4X).060 R E D C .1925 F H I N L G M FEATURES: Input Matching Network Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC

C-7 :(086)0755-26919178 : (086)0755 -26911092 Http:, , www.av-display.com.cn SHENZHEN AV-DISPLAY CO.,LTD Address:North East C-7 Building, Wenchang Street Eastern District, OCT, ShenZhen, China TEL: (086)0755-26919178 FAX: (086)0755-26911092 Http:, , www.av-display.com.cn SPECIFICATION FOR LCM M