C4616の購入情報と機能
| この部品の機能は「NPN Transistor, 2SC4616」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
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| C4616 Transistor | NPN Transistor, 2SC4616 Ordering number:EN3399C
Features
· Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V).
2SA1773 : PNP Eppitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor
2SA1773, 2SC4616
High-Voltage Driver Applications
Package Dimensions
unit:mm 2045A
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Sanyo |
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PDF File Download
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C4636 | NPN Transistor, 2SC4636 Ordering number:EN3705A
NPN Triple Diffused Planar Silicon Transistor
2SC4636
1800V, 10mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=1800V). · Small Cob (typical Cob=1.4pF). · Full-isolation package. · High reliability (Adoption of H |
 Sanyo Semicon Device |
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| C4682 | NPN Transistor, 2SC4682 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4682
Strobe Flash Applications Medium Power Amplifier Applications
2SC4682
Unit: mm
Excellent hFE linearity: hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)
Low saturation voltage: VCE (sat) |
 Toshiba |
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| C461 | NPN Transistor, 2SC461 To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i |
 Renesas |
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| C4694 | NPN Transistor, 2SC4694 Ordering number:EN3485
NPN Epitaxial Planar Silicon Transistor
2SC4694
Low-Frequency General-Purpose Amplifier, Muting Applications
Features
· Adoption of MBIT process.
· High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. � |
Sanyo |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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