C3650の購入情報と機能
| この部品の機能は「NPN Transistor, 2SC3650」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| C3650 Transistor | NPN Transistor, 2SC3650 Ordering number : EN1780B
2SC3650
SANYO Semiconductors
DATA SHEET
2SC3650
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
LF amplifiers, various drivers, muting circuit.
Features
High DC current gain (hFE=800 to 3200). Low co |
Sanyo |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C3642 | NPN Transistor, 2SC3642 Ordering number:EN1626C
NPN Triple Diffused Planar Silicon Transistor
2SC3642
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.
Package Dimension |
 Sanyo Semicon Device |
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| C3651 | NPN Transistor, 2SC3651 Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low |
Sanyo |
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| C3600 | NPN Transistor, 2SC3600 Ultrahigh-Definition CRT Display Video Output Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output.· Wide-band amp. |
Sanyo |
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| C3668 | NPN Transistor, 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3668
Power Amplifier Applications Power Switching Applications
2SC3668
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 1000 mW High-speed switching: tstg = 1.0 μ (typ.) Co |
 Toshiba |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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