C35Nの購入情報と機能
| この部品の機能は「SILICON CONTROLLED RECTIFIER」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| C35N Rectifier | SILICON CONTROLLED RECTIFIER C35 SERIES
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn, Pb plating), standard, an |
Digitron Semiconductors |
|
| C35N Diode | Diode 100V 35A Die |
New Jersey Semiconductor |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C358C | Inverter Grade SCRs |  Powerex |
|
| C3502 | NPN Transistor, 2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications |
 Sanyo Semicon Device |
|
| C35B | 35A AUTOMOTIVE CELL DIODE
WTE
POWER SEMICONDUCTORS
C35A C35K
Pb
35A AUTOMOTIVE CELL DIODE
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D
Anode +
C E
Mechanical Data
Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indi |
 Won-Top Electronics |
|
| C3518-Z | SILICON POWER TRANSISTOR DATA SHEET
SILICON POWER TRANSISTOR
2SC3518-Z
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES
High DC Current Gain hFE = 100 to 400 Low VCE(sat): VCE(sat) = 0.09 V TYP. Comple |
 Renesas |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|