C3577の購入情報と機能
| この部品の機能は「NPN Transistor, 2SC3577」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| C3577 Transistor | NPN Transistor, 2SC3577 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3577
DESCRIPTION ·With TO-3PFa package ·High breakdown voltage ·High speed APPLICATIONS ·For high speed switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 ) |
SavantIC |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C3587 | NPN Transistor, 2SC3587 DATA SHEET
SILICON TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current r |
 NEC |
|
| C350 | Phase Control SCR 115 Amperes Avg 500-1300 Volts |  Powerex Power Semiconductors |
|
| C35A | 35A AUTOMOTIVE CELL DIODE
WTE
POWER SEMICONDUCTORS
C35A C35K
Pb
35A AUTOMOTIVE CELL DIODE
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D
Anode +
C E
Mechanical Data
Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indi |
 Won-Top Electronics |
|
| C3515 | NPN Transistor, 2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
2SC3515
HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
Unit: mm
· High voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE |
 Toshiba |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|