C30902Eの購入情報と機能
| この部品の機能は「(C309xxx) Silicon Avalanche Photodiodes」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| C30902E Diode | (C309xxx) Silicon Avalanche Photodiodes Description
PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall |
PerkinElmer Optoelectronics |
|
| C30902E Diode | (C30xxx) PhotoDiode |
Perkin Elmer Optoelectronics |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C3092SH-DTC | Silicon Avalanche Photodiodes DATASHEET
SENSOR SOLUTIONS
Silicon Avalanche Photodiodes C30902 Series
High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications
Overview
PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides |
PerkinElmer Optoelectronics |
|
| C30817 | PhotoDiode w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
|
 RCA |
|
| C30659 | Si and InGaAs APD Preamplifier Modules DATASHEET
Photon Detection
C30659 Series 900, 1060, 1550, 1550E
Si and InGaAs APD Preamplifier Modules
Excelitas’ C30659-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
Excelitas Technologies’ C306 |
 Excelitas |
|
| C30956E | Photodiode |  ETC |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|