C2912の購入情報と機能
| この部品の機能は「Epitaxial Planar Silicon Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C2979 | NPN Transistor, 2SC2979 2SC2979
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1 23
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current |
Hitachi Semiconductor |
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| C2911 | NPN Transistor, 2SC2911 Ordering number:ENN779D
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1209, 2SC2911
160V, 140mA High-Voltage Switching and AF 100W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed.
Package Di |
Sanyo Semicon Device |
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| C2958 | NPN Transistor, 2SC2958 DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion correction Complementary transistor with 2SA1221 and 2SA1222 |
![]() NEC |
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| C2995 | NPN Transistor, 2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2995
FM, AM RF, MIX, OSC, IF High Frequency Amplifier Applications
2SC2995
Unit: mm
· High stability oscillation voltage on FM local oscillator. · Recommend FM, AM RF, MIX, OSC and IF.
Maximum Ratings (Ta = 25°C)
Characteristics
C |
Toshiba Semiconductor |
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