C2335Fの購入情報と機能
| この部品の機能は「KSC2335F」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| C2335F Data | KSC2335F KSC2335F
KSC2335F
High Speed, High Voltage Switching
Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curr |
Fairchild Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| C2347 | NPN Transistor, 2SC2347 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2347
TV UHF Oscillator Applications TV VHF Mixer Applications
2SC2347
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector pow |
 Toshiba |
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| C2320 | NPN Transistor, 2SC2320 2SC2320
Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistor
Excellent hFE Linearity Complementary to 2SA999
6.2 MAX.
5.6 MAX.
Unit : mm
4.6 4.4 MAX. 1.5 1 2 3 0.45 10.5 MIN.
MAXIMUM RATINGS (Ta = 25 °C) CHARACTERISTIC
Collector- |
 Mitsubishi |
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| C238A | FET Input Models |
 Devar |
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| C2310 | NPN Transistor, 2SC2310 To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i |
 Renesas |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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