BSS97の購入情報と機能

Rev. 2.0 BSS7728N SIPMOS® Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv, dt rated Product Summary VDS RDS(on) ID 60 5 0.2 SOT-23 Drain pin 3 Gate pin1 Source pin 2 V Ω A Type Package Ordering Code Q67042-S4189 Tape and Reel Information E6327: 3000 pcs, reel

SIPMOS® Small-Signal Transistor BSS 229 q q q q q q q VDS 250 V ID 0.07 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1 G 2 D 3 S SS229 TO-92 BSS 229 Q62

BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design, RoHS Compliant (Note 3) “Green” Device (Note 4) Mechanical Data SOT-563 NEW PRODUCT Case: SOT-56

SO T3 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.