BSS71の購入情報と機能
| この部品の機能は「SILICON PLANAR EPITAXIAL NPN TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BSS71 Transistor | SILICON PLANAR EPITAXIAL NPN TRANSISTOR SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BSS71
High Voltage Hermetic TO-18 Metal package. Ideally suited for High Voltage Amplifier
and Switching Applications Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector Base Voltage
200V
VCEO
Co |
TT |
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| BSS71 Transistor | HIGH VOLTAGE TRANSISTOR |
Motorola Semiconductors |
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| BSS71 Data | Bipolar NPN Device |
Seme LAB |
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| BSS71 Data | Trans GP BJT NPN 200V 0.5A 3-Pin TO-18 |
New Jersey Semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BSS69 | SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAILS BSS69 BSS70 BSS69R BSS70R L2 L3 L6 L7 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN.
-40 -40 -5 -50 -0.25 -0.40 -0.65 30 40 50 30 15 60 80 100 60 30 200 250 4.5 10 Typ. 5 35 225 70 -0.85 -0 |
 ETC |
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| BSS51 | NPN Darlington transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSS50; BSS51; BSS52 NPN Darlington transistors
Product speci cation Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 1997 Sep 03
Philips Semiconductors
Product speci cation
NPN Darlington transistors
FEATURES High current (max. |
 NXP Semiconductors |
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| BSS159 | SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) BSS 159
Preliminary data
SIPMOS ® Small-Signal Transistor N channel Depletion mode High dynamic resistance
Pin 1 G Type BSS 159
Pin 2 S
Pin 3 D
VDS
50 V
ID
0.16 A
RDS(on)
8Ω
Package SOT-23
Ordering Code Q67050-T6
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symb |
 Siemens Semiconductor Group |
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| BSS84AKS | MOSFET, Transistor TS SO P6
BSS84AKS
50 V, 160 mA dual P-channel Trench MOSFET
Rev. 1 23 May 2011 Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology.
1.2 Features and benef |
NXP Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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