BSP205の購入情報と機能
| この部品の機能は「P-channel enhancement mode vertical D-MOS transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BSP170P | SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) BSP 170 P
Preliminary data SIPMOS® Power Transistor P-Channel
Enhancement
mode
Avalanche rated dv, dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximum Ratings , at Tj = 25°C, unless otherwise specified Parameter Continuous drain current TA = 25 °C T |
Siemens Semiconductor Group |
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| BSP772T | Smart Power High-Side-Switch BSP 772 T
Smart Power High-Side-Switch
Features Overload protection Current limitation Short circuit protection Thermal shutdown with restart Fast demagnetization of inductive loads Reverse battery protection with external resistor CMOS compatible input Loss of GND and loss of Vbb protectio |
![]() Infineon Technologies AG |
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| BSP52 | NPN Darlington Transistor BSP52
BSP52
NPN Darlington Transistor
This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03.
2 1 4
3
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol VCES VC |
Fairchild Semiconductor |
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| BSP316P | SIPMOS Small-Signal-Transistor SIPMOS® Small-Signal-Transistor
Feature P-Channel Enhancement mode Logic Level dv, dt rated
Qualified according to AEC Q101 Halogenfree according to IE C 61249221
BSP316P
Product Summary VDS -100 V RDS(on) 1.8 Ω ID -0.68 A
PG-SOT223-4-1
Gate pin1
Drain pin 2, 4
Source pin 3
Type |
![]() Infineon Technologies AG |
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