BSM200GB120の購入情報と機能
| この部品の機能は「IGBT Power Module ( 1200V, 200A )」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BSM200GB120 IGBT | IGBT Power Module ( 1200V, 200A ) Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes Package with insulated metal base plate Type |
Siemens Semiconductor Group |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BSM10GD120DN2 | IGBT Power Module BSM 10 GD 120 DN2
IGBT Power Module
Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltag |
 eupec |
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| BSM75GB170DN2 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) BSM 75 GB 170 DN2
IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 22 Ohm Type BSM 75 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
VCE
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Siemens Semiconductor Group |
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| BSM35GB120DN2 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) BSM 35 GB 120 DN2
IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Doubled diode area Package with insulated metal base plate Type BSM 35 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
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Siemens Semiconductor Group |
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| BSM200GA160D | IGBT Module |  Infineon Technologies |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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