BLV910の購入情報と機能
| この部品の機能は「UHF power transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BLV910 Transistor | UHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV910 UHF power transistor
Product speci cation 1995 Apr 11
Philips Semiconductors
Philips Semiconductors
Product speci cation
UHF power transistor
FEATURES Internal input matching to achieve high power gain and easy design of wideband circuits Emitter bal |
NXP Semiconductors |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BLV1N60 | N-Channel Enhancement Mode Power MOSFET BLV1N60
N-channel Enhancement Mode Power MOSFET
Avalanche Energy Specified Fast Switching Simple Drive Requirements
BVDSS RDS(ON) ID
600V 8Ω 1A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode po |
 BELLING |
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| BLV99 | UHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV99, SL UHF power transistor
Product speci cation September 1991
Philips Semiconductors
Product speci cation
UHF power transistor
FEATURES Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. DES |
NXP Semiconductors |
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| BLV830 | N-Channel Enhancement Mode Power MOSFET BLV830
N-channel Enhancement Mode Power MOSFET
Avalanche Energy Specified Fast Switching Simple Drive Requirements
BVDSS RDS(ON) ID
500V 1.5Ω 4.5A
Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode |
BELLING |
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| BLV21 | UHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV21 VHF power transistor
Product speci cation August 1986
Philips Semiconductors
Product speci cation
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a |
NXP Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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