BFR97の購入情報と機能

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR93AT NPN 5 GH- wideband transistor Product speci cation Supersedes data of 1999 Nov 02 2000 Mar 09 Philips Semiconductors Product speci cation NPN 5 GH- wideband transistor FEATURES High power gain Gold metallization ensures excellent reliability

BFR740L3 NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to 10 GH- and more Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F =

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BFR30LT1, D JFET Amplifiers N Channel 2 SOURCE 3 GATE BFR30LT1 BFR31LT1 3 1 1 DRAIN 2 CASE 318 08, STYLE 10 SOT 23 (TO 236AB) MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc V

BFR 180W NPN Silicon RF Transistor For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA fT = 7GH- F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR