BFR360Tの購入情報と機能
| この部品の機能は「NPN Silicon RF Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFR92A | NPN 5 GHz wideband transistor BFR92A
NPN 5 GH- wideband transistor
Rev. 04 2 March 2009
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where |
NXP Semiconductors |
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| BFR380 | NPN Silicon RF Transistor BFR380F
NPN Silicon RF Transistor Preliminary data
High current capability and low figure for
wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.5 GH- Low noise figure: 1.1 dB at 1.8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, obse |
![]() Infineon Technologies AG |
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| BFR183W | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector current from 2 mA to 30mA) BFR 183W
NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GH- F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183W RHs Q62702-F14 |
Siemens Semiconductor Group |
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| BFR92T | NPN Silicon RF Transistor BFR92T
NPN Silicon RF Transistor Preliminary data
For broadband amplifiers up to 2 GH- and
3
fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT92T (PNP)
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF |
![]() Infineon Technologies AG |
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