BFR360Fの購入情報と機能
| この部品の機能は「Low Noise Silicon Bipolar RF Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BFR360F Transistor | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
Low noise amplifier for low current applications Collector design supports 5 V supply voltage For oscillators up to 3.5 GH- Low noise figure 1.0 dB at 1.8 GH- Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads Qualificat |
Infineon Technologies AG |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFR30LT1 | JFET Amplifiers(N-Channel) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1, D
JFET Amplifiers
N Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
2
CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
MAXIMUM RATINGS
Rating Drain Source Voltage Gate Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc V |
 Motorola Inc |
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| BFR14C | NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz |  Siemens Semiconductor Group |
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| BFR949L3 | NPN Silicon RF Transistor BFR949L3
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1.0 dB at 1 GHz
3 1 2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949L3
Maximum Ratings Parameter
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Infineon Technologies AG |
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| BFR90 | Silicon NPN Planar RF Transistor BFR90
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
RF amplifier up to GH- range specially for wide band antenna amplifier.
Features
D High power gain D Low noise figure D High transition frequency
3
2
94 9308
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 Vishay Telefunken |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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