BFP96の購入情報と機能
| この部品の機能は「NPN 5GHz Qideband Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
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| BFP96 Transistor | NPN 5GHz Qideband Transistor |
NXP Semiconductors |
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| BFP96 Data | (BFPxx) Class A Low Noise |
Thomson Semiconductors |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFP183R | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) BFP 183R
NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GH- F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 183R RHs Q62702-F |
Siemens Semiconductor Group |
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| BFP780 | 200mW High Gain RF Driver Amplifier BFP780
200 mW High Gain RF Driver Amplifier
Data Sheet
Revision 3.0, 2015-07-08
RF & Protection Devices
Edition 2015-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2015 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document shall in |
![]() Infineon |
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| BFP540FESD | Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor
For ESD protected high gain low noise amplifier Excellent ESD performance
typical value 1000 V (HBM) Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 dB Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible leads Qualifica |
![]() Infineon Technologies |
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| BFP193TW | Silicon NPN Planar RF Transistor BFP193T, BFP193TW, BFP193TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain applications such as power amplifiers up to 2 GH- and for linear broadband amplifiers.
Features
D Low noise fi |
![]() Vishay Telefunken |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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