BFP92Aの購入情報と機能
| この部品の機能は「Silicon NPN Planar RF Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BFP92A Transistor | Silicon NPN Planar RF Transistor BFP92A, BFP92AW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
RF amplifier up to GH- range, especially for wide band antenna amplifiers.
Features
D High power gain D Low noise figure D High transition frequency
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Vishay Telefunken |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFP740ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor BFP740ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-10-08
RF & Protection Devices
Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in |
 Infineon |
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| BFP490 | NPN Silicon RF Transistor (Q62702-F1721) SIEGET® 25
NPN Silicon RF Transistor Preliminary data For high power amplifiers Compression point P-1dB = 26.5 dBm at 1.8 GH- maxim. available Gain Gma = 9.5 dB at 1.8 GH- Transition frequency fT > 17 GH- Gold metalization for high reliability SIEGET ® 25 - Line Siemens Grounded Emitter Trans |
 Siemens Semiconductor Group |
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| BFP183TRW | Silicon NPN Planar RF Transistor BFP183T, BFP183TW, BFP183TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.
Features
D Low power applications D Low noise f |
Vishay Telefunken |
|
| BFP840ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor BFP840ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2013-03-28
RF & Protection Devices
Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in |
Infineon |
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