BFP843Fの購入情報と機能
| この部品の機能は「Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BFP840FESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor BFP840FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2013-04-03
RF & Protection Devices
Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given i |
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| BFP620F | NPN Silicon Germanium RF Transistor Low Noise SiGe:C Bipolar RF Transistor
High gain low noise RF transistor Based on Infineon's reliable high volume
Silicon Germanium technology Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
Outstanding noise figure NFmin = 1.3 dB at 6 GH- Maximum stable gain
Gms = 21 dB at 1.8 GH- Gma = 10 d |
![]() Infineon Technologies AG |
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| BFP196 | NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna and telecommunications) BFP 196
NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GH- at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive dev |
Siemens Semiconductor Group |
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| BFP136 | NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) BFP 136W
NPN Silicon RF Transistor For power amplifier in DECT and PCN systems
fT = 5.5GHz
Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3=E 4=B
P |
Siemens Semiconductor Group |
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