BF181の購入情報と機能
| この部品の機能は「TRANZYSTORY」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BF181 Data | TRANZYSTORY |
ETC |
|
| BF181 Data | (BF180 / BF181) NPN TRANZYSTORY ( t : )
|
ETC |
|
| BF181 tv | (BF1xx) TV / Video Devices |
Semiconductors |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BF1009S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) BF 1009S
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 9V Integrated bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Q62702-F1628
Pin Configuration 1=S 2=D 3 = |
 Siemens Semiconductor Group |
|
| BF182 | TRANZYSTORY | ETC |
|
| BF1204 | Dual N-channel dual gate MOS-FET DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1204 Dual N-channel dual gate MOS-FET
Product speci cation Supersedes data of 2000 Nov 13 2001 Apr 25
Philips Semiconductors
Product speci cation
Dual N-channel dual gate MOS-FET
FEATURES Two low noise gain controlled amplifiers in |
 NXP Semiconductors |
|
| BF1100R | Dual-gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF1100; BF1100R Dual-gate MOS-FETs
Product speci cation File under Discrete Semiconductors, SC07 1995 Apr 25
Philips Semiconductors
Philips Semiconductors
Product speci cation
Dual-gate MOS-FETs
FEATURES Specially designed for use at 9 to 12 V supply voltage |
NXP Semiconductors |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|