BDV91の購入情報と機能
| この部品の機能は「Silicon Epitaxial Base Power Transistors」です。 |
|
|
製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BDV91 Transistor | Silicon Epitaxial Base Power Transistors |
ETC |
|
PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BDV94 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96
·Complement to Type BDV91, 93, 95
APPLICATIONS ·Designed for use in audio output stages and g |
 INCHANGE |
|
| BDV64 | POWER TRANSISTORS(12A/125W) A
A
A
A
|
 Mospec Semiconductor |
|
| BDV65C | NPN SILICON POWER DARLINGTONS BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS
Copyright 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at |
 Power Innovations Limited |
|
| BDV65 | NPN SILICON POWER DARLINGTONS BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS
Copyright 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at |
Power Innovations Limited |
|
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|