BDT87の購入情報と機能
| この部品の機能は「Silicon NPN Power Transistors」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
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| BDT85F | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to Type BDT82F, 84F, 86 |
Inchange Semiconductor |
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| BDT62A | Silicon PNP Darlington Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type |
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| BDT64A | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65, A, B, C APPLICATIONS ·Designed for audio output stages and general purpose amplifier ap |
Inchange Semiconductor |
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| BDT65A | SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTORS
BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT |
Comset Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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