BDT83の購入情報と機能
| この部品の機能は「Silicon NPN Power Transistors」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BDT61A | NPN SILICON POWER DARLINGTONS BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
Copyright 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1 |
![]() Power Innovations Limited |
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| BDT88 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 ·Complement to Type BDT81, 83, 85, |
Inchange Semiconductor |
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| BDT63A | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62, A, B, C APPLICATIONS ·Designed for audio output stages and general purpose amplifier appl |
Inchange Semiconductor |
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| BDT64C | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65, A, B, C APPLICATIONS ·Designed for audio output stages and general purpose amplifier ap |
Inchange Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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