BDT60の購入情報と機能
| この部品の機能は「PNP SILICON POWER DARLINGTONS」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
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| BDT60 Data | PNP SILICON POWER DARLINGTONS |
New Jersey Semi-Conductor |
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| BDT60 Transistor | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60, A, B, C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C
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Inchange Semiconductor |
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| BDT60 Data | PNP SILICON POWER DARLINGTONS |
Power Innovations Limited |
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| BDT60 Data | PNP SILICON POWER DARLINGTONS |
TRSYS |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BDT86 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 ·Complement to Type BDT81, 83, 85, |
Inchange Semiconductor |
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| BDT62B | Silicon PNP Darlington Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type |
 INCHANGE |
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| BDT64AF | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDT64F, AF, BF, CF
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65F, AF, BF, CF
APPLICATIONS ·Designed for audio output stages and gene |
INCHANGE |
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| BDT65B | SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTORS
BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT |
 Comset Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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