BDT41の購入情報と機能
| この部品の機能は「Silicon Epitaxial Base Power Transistors」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BDT41 Transistor | Silicon Epitaxial Base Power Transistors |
ETC |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BDT65B | SILICON DARLINGTON POWER TRANSISTORS SEMICONDUCTORS
BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT |
 Comset Semiconductors |
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| BDT84 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 ·Complement to Type BDT81, 83, 85, |
 Inchange Semiconductor |
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| BDT61B | NPN SILICON POWER DARLINGTONS BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
Copyright 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1 |
 Power Innovations Limited |
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| BDT88 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 ·Complement to Type BDT81, 83, 85, |
Inchange Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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