BCR8CMの購入情報と機能
| この部品の機能は「MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BCR8CM Data | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR8CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8CM
OUTLINE DRAWING
10.5 MAX
Dimensions in mm
4.5 4
16 MAX
3.2±0.2
1.3
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
2.5
7.0
φ3.6±0.2 0.5
2.6
123 24 1 2 33 4
Meas |
Mitsubishi Electric Semiconductor |
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| BCR8CM Triac | Triac 8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
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| BCR8CM Data | (BCR8CM / BCR8DM) |
ETC |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BCR185T | PNP Silicon Digital Transistor BCR185..., SEMB9
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10kΩ , R2 = 47kΩ ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR185, F, L3 BCR185T, W
C 3
BCR1 |
 Infineon Technologies AG |
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| BCR8DM | (BCR8CM / BCR8DM) http:, , ,
datasheet pdf - http:, , ,
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ETC |
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| BCR133T | NPN Silicon Digital Transistor BCR133..., SEMH11
NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR133, F, L3 BCR133T, W
C 3
B |
Infineon Technologies AG |
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| BCR2AS-14A | Triac Preliminary Datasheet
BCR2AS-14A
Triac Low Power Use
Features
IT (RMS) : 2 A VDRM : 700 V IFGTI, IRGTI, IRGT : 10 mA Non-Insulated Type Planar Passivation Type R07DS0257EJ0100 Rev.1.00 Feb 28, 2011
Outline
RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A)
4
2, 4
1. 2. 3. 4. T1 Termin |
 Renesas |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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