BCR3の購入情報と機能
| この部品の機能は「LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BCR179L3 | PNP Silicon Digital Transistor BCR179..., SEMB4
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit. Built in bias resistor (R1 = 10kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR179F, L3 BCR179T
C 3
SEMB4
C1 6 B2 5 E2 4
R |
![]() Infineon Technologies AG |
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| BCR12LM-14LB | Triac Preliminary Datasheet
BCR12LM-14LB
Triac
Medium Power Use Features
IT (RMS) : 12 A VDRM : 800 V (Tj = 125 C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 1800 V The Product guaranteed maximum junction temperature 150 C Insulated Type Planar Type UL Recognized: File No. E223904 R07DS0059EJ0100 Rev.1 |
![]() Renesas Technology |
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| BCR16CM | TRIAC MITSUBISHI SEMICONDUCTOR TRIAC
BCR16CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR16CM
OUTLINE DRAWING
10.5 MAX
Dimensions in mm
4.5 4
16 MAX
3.2±0.2
1.3
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
2.5
7.0
φ3.6±0.2 0.5
2.6
123 24 1 2 33 4
Me |
Mitsubishi Electric Semiconductor |
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| BCR116F | NPN Silicon Digital Transistor BCR116..., SEMH13
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=47kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR116, F, L3 BCR116T, W
C 3
BCR116S |
![]() Infineon Technologies AG |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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