BCR2PMの購入情報と機能
| この部品の機能は「LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BCR2PM Data | LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR2PM
OUTLINE DRAWING
Dimensions in mm
10.5 MAX 5.2
1.2
2.8
5.0
TYPE NAME
17
φ3.2 ± 0.2
3.6
VOLTAGE CLASS
1.3 MAX
13.5 MIN
0.8
2.54
2.54
8.5
0.5
2.6
¡IT (RMS) ................. |
Mitsubishi Electric Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BCR8KM-14LA | Triac Medium Power Use BCR8KM-14LA
Triac
Medium Power Use
REJ03G0333-0100 Rev.1.00 Aug.20.2004
Features
IT (RMS) : 8 A VDRM : 700 V IFGTI , IRGTI, IRGTⅢ : 30 mA (20 mA)Note5 Viso : 2000 V Insulated Type Planar Passivation Type UL Recognized : Yellow Card No. E223904 File No. E80271
Outline
TO-220FN
2
1. T1 Te |
 Renesas Technology |
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| BCR30 | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM
OUTLINE DRAWING
15.9 MAX 4
Dimensions in mm
4.5±0.3 1.5±0.2
φ3.2±0.2
5.0 20.0±0.5
TYPE NAME VOLTAGE CLASS
2
2±0.3 1.0±0.2 1 2 3
4 19.5 MIN
0.6±0.2
2.8±0.3
5.45 5.45
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Mitsubishi Electric Semiconductor |
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| BCR5KM-12LB | Triac Medium Power Use
BCR5KM-12LB
Triac
Medium Power Use
REJ03G0317-0200 Rev.2.00 Mar 06, 2007
Features
IT (RMS) : 5 A VDRM : 600 V IFGTI , IRGTI, IRGTIII : 20 mA (10 mA)Note5 Viso : 2000 V The product guaranteed maximum junction temperature 150°C. Insulated Type Planar Passivation Type Refer to the recommend |
Renesas Technology |
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| BCR1AM-8 | LOW POWER USE PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
BCR1AM-8
OUTLINE DRAWING
φ5.0 MAX 4.4
Dimensions in mm
2
VOLTAGE CLASS TYPE NAME
3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
CIRCUMSCRIBE CIRCLE φ0.7
1.25 1.25
1.3
12.5 MIN
1
5.0 MAX
1.0 10 0.41 1 0.1 6 1 |
Mitsubishi Electric Semiconductor |
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