BCR148Fの購入情報と機能
| この部品の機能は「NPN Silicon Digital Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BCR148F Transistor | NPN Silicon Digital Transistor BCR148..., SEMH2
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47kΩ, R2=47kΩ) For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR148, F, L3 BCR148T, W
C 3
BCR148S, U |
Infineon Technologies AG |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BCR16HM | MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16HM
OUTLINE DRAWING
2 5.0 MIN
23.0MAX
Dimensions in mm
39.2 MAX 20.2 MAX
2-φ4.2
3 20.1 MAX 21.6 MAX 30.0±0.2 7.0 7.0 8.25 6.35
7.95 9.75
2
1
3 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL |
 Mitsubishi Electric Semiconductor |
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| BCR12 | MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR TRIAC
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12CM
OUTLINE DRAWING
10.5 MAX
3.2±0.2
Dimensions in mm
4.5 4
1.3
16 MAX
12.5 MIN 3.8 MAX
TYPE NAME VOLTAGE CLASS
1.0
0.8
2.5
2.5
4.5
7.0
φ3.6±0.2
0.5
2.6
123 24 1 2 33 4
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Mitsubishi Electric Semiconductor |
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| BCR164T | PNP Silicon Digital Transistor BCR164...
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7kΩ , R2 = 10kΩ )
BCR164F, L3 BCR164T
C 3
R1 R2
1 B
2 E
EHA07183
Type
Marking
Pin Configuration
Package
BCR164F* BCR164L3* BCR164T* * Preliminary
Maxi |
Infineon Technologies AG |
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| BCR10PM-12LA | Triac Preliminary Datasheet
BCR10PM-12LA
Triac
Medium Power Use Features
IT (RMS) : 10 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note5 Viso : 2000 V
R07DS0104EJ0300 (Previous: REJ03G0304-0200) Rev.3.00 Sep 13, 2010
Insulated Type Planar Passivation Type UL Recognised : Yellow Card No. |
 Renesas Technology |
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