BC856AFの購入情報と機能
| この部品の機能は「PNP general purpose transistors」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BC81716 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 5 MARCH 2001 PARTMARKING DETAILS BC81716 6AZ BC81725 6BZ BC81740 6CZ
BC817
C B
E
COMPLEMENTARY TYPE
BC807
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current C |
Zetex Semiconductors |
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| BC847BDW1T1G | Dual General Purpose Transistors BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363, SC 88 which is designed for low power surface mount applications. Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 |
ON Semiconductor |
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| BC813C | PNP Epitaxial Silicon Transistor BC318C PNP Epitaxial Silicon Transistor
September 2007
BC318C PNP Epitaxial Silicon Transistor
This device is designed for general purpose amplifier application at collector currents to 800mA. Sourced from process 38.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TC=25°C |
Fairchild Semiconductor |
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| BC846F | NPN general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
BC846F; BC847F; BC848F series NPN general purpose transistors
Preliminary speci cation Supersedes data of 1998 Nov 10 1999 May 18
Philips Semiconductors
Preliminary speci cation
NPN general purpose transistors
FEATURES Power dissipation comparable to |
NXP Semiconductors |
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