BC321の購入情報と機能

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC372, D High Voltage Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 BC372 BC373 1 2 EMITTER 1 3 CASE 29 04, STYLE 1 TO 92 (TO 226AA) MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base V

BC327, 328 BC327, 328 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337, BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Paramete

BC307, 308, 309 BC307, 308, 309 Switching and Amplifier Applications Low Noise: BC309 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCES Collector-Emitter Voltage : BC307 : BC308, 309 VCEO Collector-Emitter Voltage : BC307 : BC30

BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package NXP BC817 SOT23 BC817W SOT323 BC337[1] SOT54 (TO-92)