BAS3010Sの購入情報と機能
| この部品の機能は「Low VF Schottky Diode」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| BAS3010S Diode | Low VF Schottky Diode BAS3010S...
Low VF Schottky Diode Forward current: 1 A Reverse voltage: 30 V Low forward voltage and smallest package form factor (1.0 x 0.6 x < 0.4 mm) for mobile phone battery charger application Pb-free (RoHS compliant) package1) Qualified according AEC Q101
BAS3010S-03LRH
2 3 1
Type BAS30 |
Infineon Technologies |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| BAS81 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D121
BAS81; BAS82; BAS83 Schottky barrier diodes
Product speci cation Supersedes data of 1996 Sep 30 1998 Jun 24
Philips Semiconductors
Product speci cation
Schottky barrier diodes
FEATURES Low forward voltage High breakdown voltage Guard ring pro |
 NXP Semiconductors |
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| BAS40W-04-7 | Schottky Barrier Diode ( SMD ) BAS40W, -04, -05, -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features
· · · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection
SOT-323 Dim
A C B C
Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0°
Max 0.40 1. |
 Diodes Incorporated |
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| BAS70T-04T | Schottky Barrier Diode ( SMD ) BAS70T, -04T, -05T, -06T
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features
NEW PRODCUT
· · · · · · · · · · · ·
Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Ultra-Small Surface Mount Package
B
SOT-523 Dim
A C TOP VIEW E G H K N L M B C
Min |
Diodes Incorporated |
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| BAS4006LT1 | CASE 318-08/ STYLE 11 SOT-23 (TO-236AB) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAS40 06LT1, D
Dual Series Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniat |
 Motorola Inc |
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