AP4100の購入情報と機能
| この部品の機能は「High Performance IR Enhanced P-Type Silicon Photodiodes」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| AP4100 Diode | High Performance IR Enhanced P-Type Silicon Photodiodes |
Antel Optronics |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AP4953M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4953M
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching
D1 G2 S2 D2 D1 D2
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 53mΩ -5A
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the designer with the |
 Advanced Power Electronics |
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| AP4813GSM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP4813GSM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Recovery Time ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
D D D D
N-CHANNEL MOSFET WITH SCHOTTKY DIODE
BVDSS RDS(ON)
G
30V 9mΩ 13A
ID
D
SO-8
S S
S
Description
Adva |
Advanced Power Electronics |
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| AP4565GM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4565GM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance
D2 D1 D2 D1 D1 D1 D2 D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID
G2 G2 S2 S2 G1 S1 G1 S1
40V 25mΩ 7.6A -40V 33mΩ -6.5 |
Advanced Power Electronics |
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| AP4511GM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP4511GM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance
D2 D1 D2 D1 D1 D1 D2 D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID
G2 G2 S2 G1 S2 S1 G1 S1
35V 25mΩ 7A -35V 40mΩ -6.1A
P |
Advanced Power Electronics |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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