AM29SL400Cの購入情報と機能
| この部品の機能は「Super Low Voltage Flash Memory」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| AM29SL400C Data | Super Low Voltage Flash Memory
Am29SL400C
Data Sheet
July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to cu |
AMD |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AM28F512-120PI | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL
Am28F512
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance 70 ns maximum access time s CMOS Low power consumption 30 mA maximum active current 100 A maximum standby current No data retention power consumption s Compatible wi |
 Advanced Micro Devices |
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| AM27S191SA65DCB-S | 16/384-BIT (2048 x 8) BIPOLAR PROM | Advanced Micro Devices |
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| AM27X512-150PI | 512 Kilobit (64 K x 8-Bit) CMOS ExpressROM Device FINAL
Am27X512
512 Kilobit (64 K x 8-Bit) CMOS ExpressROM Device
DISTINCTIVE CHARACTERISTICS
s As an OTP EPROM alternative: Factory optimized programming Fully tested and guaranteed s As a Mask ROM alternative: Shorter leadtime Lower volume per code s Fast access time 70 ns s Single +5 V power |
Advanced Micro Devices |
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| AM27F010-70JC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL
Am28F010
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance 70 ns maximum access time s CMOS Low power consumption 30 mA maximum active current 100 A maximum standby current No data retention power consumption s Compatible wit |
Advanced Micro Devices |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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