AM29LL800Bの購入情報と機能
| この部品の機能は「8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| AM29LL800B CMOS | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory ADVANCE INFORMATION
Am29LL800B
8 Megabit (1 M x 8-Bit, 512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation 2.2 to 2.7 volt read and write operations for battery-powered applications s Manufactured on 0.35 m process technology Co |
AMD |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| Am29F100B-90EC | 1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory FINAL
Am29F100
1 Megabit (128 K x 8-bit, 64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation 5.0 V ± 10% for read, erase, and program operations Simplifies system-level power requirements s High performance 70 ns maximum access |
AMD |
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| Am29DL800BT70EEB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash Memory PRELIMINARY
Am29DL800B
8 Megabit (1 M x 8-Bit, 512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
s Simultaneous Read, Write operations Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero |
 Advanced Micro Devices |
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| Am29F002T-90EC | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory PRELIMINARY
Am29F002, Am29F002N
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation 5.0 Volt-only operation for read, erase, and program operations Minimizes system level requirements s High performance Access times as |
Advanced Micro Devices |
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| AM28F512A-200ECB | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms FINAL
Am28F512A
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance 70 ns maximum access time s CMOS low power consumption 30 mA maximum active current 100 A maximum standby current No data retention power c |
Advanced Micro Devices |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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