AM29F032B-150ECの購入情報と機能
| この部品の機能は「32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AM28F512A-120FC | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms FINAL
Am28F512A
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance 70 ns maximum access time s CMOS low power consumption 30 mA maximum active current 100 A maximum standby current No data retention power c |
![]() Advanced Micro Devices |
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| Am29F002T-120JIB | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory PRELIMINARY
Am29F002, Am29F002N
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation 5.0 Volt-only operation for read, erase, and program operations Minimizes system level requirements s High performance Access times as |
![]() Advanced Micro Devices |
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| AM2390N | N-Channel 150-V (D-S) MOSFET Analog Power
AM2390N
N-Channel 150-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC, DC converters White LED boost converters
PRODUCT SUMMARY rDS(on) (Ω) 0 |
![]() Analog Power |
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| AM28F010A-150FEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms FINAL
Am28F010A
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance Access times as fast as 70 ns s CMOS low power consumption 30 mA maximum active current 100 A maximum standby current No data retention powe |
![]() Advanced Micro Devices |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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