60NF06の購入情報と機能
| この部品の機能は「N-Channel MOSFET Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 60NF06 MOSFET | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
60NF06
FEATURES ·Drain Current ID=60A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max) ·Fast Switching DESCRIPTION Suitable as primary switch in advan |
Inchange |
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Features
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Voltage Ratings (TC = 25OC unless otherwise specified) Parameter
Maximum repetitive pe |
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| 60N03S | AP60N03S 30V 13.5mΩ 55A, The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. |
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| 60N3LH5 | N-channel Power MOSFET STD60N3LH5 STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET
Features
Type STD60N3LH5 STP60N3LH5 STU60N3LH5
VDSS 30 V 30 V 30 V
RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω
ID 48 A 48 A 48 A
- RDS(on) * Qg industry benchmark - Extremely low on |
 STMicroelectronics |
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| 60N100D | FGL60N100D FGL60N100D
IGBT
FGL60N100D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications
Features
H |
 Fairchild Semiconductor |
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