2SD661の購入情報と機能
| この部品の機能は「Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SD661 Transistor | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661
Symbol VCBO VC |
Panasonic Semiconductor |
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| 2SD661 Transistor | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SD1752A | Silicon NPN epitaxial planar type Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A
q q q q q
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
Low collector to emitter saturation voltage VCE(sat) High-speed switching Satisfactory linear |
Panasonic Semiconductor |
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| 2SD722 | NPN Transistor |
 ETC |
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| 2SD2166 | Low VCE(sat) Transistor(Strobe flash) Transistors
Low VCE(sat) Transistor(Strobe flash)
2SD2098 , 2SD2118 , 2SD2097 , 2SD2166
FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC , IB = 4A , 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 , 2SB1412 , 2SB1326 , 2SB1436. FStructure Epitaxial plana |
 ROHM Semiconductor |
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| 2SD1615 | NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits.
FEATURES
World Standard Miniature Package Low VCE |
 NEC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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