2SC941の購入情報と機能
| この部品の機能は「TRANSISTOR SILICON NPN EPIITAXIAL TYPE」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC941 Transistor | TRANSISTOR SILICON NPN EPIITAXIAL TYPE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC941TM
2SC941TM
High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
Unit: mm
· Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta = 25°C)
Characteristi |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC5320 | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
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| 2SC5344N | NPN Silicon Transistor Semiconductor
2SC5344N
NPN Silicon Transistor
Description
Audio power amplifier application
Features
High DC current gain : hFE=100~320 Complementary pair with 2SA1981N
Ordering Information
Type NO. 2SC5344N Marking C5344 Package Code TO-92N
Outline Dimensions
unit : mm
4.20~4.40
4.20~4. |
 AUK |
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| 2SC5191-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON TRANSISTOR
2SC5191
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Colle |
 NEC |
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| 2SC867 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC867
DESCRIPTION ·With TO-66 package ·High collector-base breakdown voltage :VCBO=400V(min) APPLICATIONS ·For high voltage and switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplif |
 SavantIC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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