2SC6135の購入情報と機能
| この部品の機能は「High-Speed Switching Applications」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC1847 | Silicon NPN epitaxial planar type Power Transistors
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0886
φ 3.16±0.1 8.0+0.5 0.1
Unit: mm
3.2±0.2
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitte |
Panasonic Semiconductor |
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| 2SC5335 | Silicon NPN epitaxial planer type(For low-frequency output amplification) Transistor
2SC5335(Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
0.7
4.0
s Features
q q
0.65 max.
1.0 1.0
High foward current transfer ratio hFE. Low collector to emitter saturation vol |
Panasonic Semiconductor |
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| 2SC4769 | Very High-Definition Color Display Horizontal Deflection Output Applications Ordering number:EN3665
NPN Triple Diffused Planar Silicon Transistor
2SC4769
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBI |
Sanyo Semicon Device |
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| 2SC5803 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5803
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications |
Inchange Semiconductor Company |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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