2SC5556の購入情報と機能
| この部品の機能は「For UHF Band Low-Noise Amplification」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5556 Transistor | For UHF Band Low-Noise Amplification Transistors
2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification - Features
Low noise figure NF High transition frequency fT Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
0.40+0.10 0.0 |
Panasonic Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC1678 | SILICON NPN EPITAXIAL PLANAR TYPE |
 Toshiba Semiconductor |
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| 2SC5902 | Silicon NPN Transistor ( 1700V, 9A ) • High breakdown voltage: VCBO ≥ 1700 V • Wide Safe Operating Area (SOA) • Built-in damper diode for horizontal deflection • Optimized for TV horizontal output stages |
Panasonic Semiconductor |
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| 2SC5247 | Silicon NPN Epitaxial 2SC5247
Silicon NPN Epitaxial
ADE-208-281 1st. Edition
Application
VHF , UHF wide band amplifier
Features
High gain bandwidth product fT = 13.5 GH- typ High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz
Outline
SMPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC5247
Abs |
 Hitachi Semiconductor |
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| 2SC4667 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications Computer, Counter Applications
2SC4667
Unit: mm
High transition frequency: fT = 400 MH- (typ.) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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