2SC5446の購入情報と機能
| この部品の機能は「Transistor Silicon NPN Triple Diffused Mesa Type」です。 |
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製品の詳細 ( データシート PDF )
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
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| 2SC5041 | NPN Triple Diffused Planar Silicon Transistor Ordering number:EN4779
NPN Triple Diffused Planar Silicon Transistor
2SC5041
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (HVP process).
· High breakdown voltage (VCBO=1600V). · Adoption of MBIT process.
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Sanyo Semicon Device |
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| 2SC1454 | NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) 2SC1454
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-3
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Sy |
![]() Wing Shing Computer Components |
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| 2SC4455 | NPN Epitaxial Planar Silicon Transistor Ordering number:EN2814
NPN Epitaxial Planar Silicon Transistor
2SC4455
High-Speed Switching Applications
Features
· Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.
Package Dimensions
unit:mm
2061A
[2SC4455]
5.0 4.0 4.0
0.6 |
Sanyo Semicon Device |
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| 2SC3871 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3871
DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching
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APPLICATIONS ·Designed for high speed swi |
Inchange Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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