2SC5396の購入情報と機能
| この部品の機能は「SILICON NPN EPITAXIAL TYPE TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5396 Transistor | SILICON NPN EPITAXIAL TYPE TRANSISTOR ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
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ETC |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC4155 | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
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ETC |
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| 2SC5180 | NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
2
Low current consumption and high gain
S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
PACKAGE DIMENSIONS
(Units : mm) 2.1 ± 0.2 1.25 ± 0.1
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 NEC |
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| 2SC4584 | Switching Power Transistor(6A NPN) SHINDENGEN
Switching Power Transistor
HFX Series
(TP6W80HFX)
6A NPN
2SC4584
OUTLINE DIMENSIONS
Case : ITO-3P Unit : mm
RATINGS
●Absolute Maximum Ratings Item
Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curren |
 Shindengen Electric Mfg.Co.Ltd |
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| 2SC3587 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current re |
NEC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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