2SC5261の購入情報と機能
| この部品の機能は「NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5261 Transistor | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC1906 | Silicon NPN Epitaxial Planar 2SC1906
Silicon NPN Epitaxial Planar
Application
VHF amplifier Mixer, Local oscillator
Outline
TO-92 (2)
1. Emitter 2. Collector 3. Base 3 2 1
2SC1906
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emi |
 Hitachi Semiconductor |
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| 2SC3324 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3324
2SC3324
Audio Frequency Low Noise Amplifier Applications
Unit: mm
High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA), hFE (IC = 2 mA)
= 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF (2) = 0.2dB (typ.) |
Toshiba Semiconductor |
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| 2SC2585 | NPN SILICON RF TRANSISTOR
2SC2585
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCEO VCBO VEB PT TJ TSTG θJC
O O
65 mA 12 V 25 V 1.5 V 400 mW @ TC = 166 C -65 C to |
 Advanced Semiconductor |
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| 2SC5843 | NPN SiGe RF TRANSISTOR DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5843
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
Maximum stable power gain: MSG |
 NEC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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