2SC5232の購入情報と機能
| この部品の機能は「Silicon NPN Epitaxial Type TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5232 Transistor | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5232
General Purpose Amplifier Applications Switching and Muting Switch Application
2SC5232
Unit: mm
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA, IB = 0.5 mA
Large collector current: IC = 500 mA (max)
Absolute M |
Toshiba Semiconductor |
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| 2SC5232 Transistor | Silicon NPN Epitaxial |
Kexin |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC5506 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ordering number:EN6070
NPN Triple Diffused Planar Silicon Transistor
2SC5506
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Packa |
 Sanyo Semicon Device |
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| 2SC5007 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DATA SHEET
SILICON TRANSISTOR
2SC5007
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current cap |
 NEC |
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| 2SC6096 | NPN Epitaxial Planar Silicon Transistor
Ordering number : ENA0434
2SC6096
SANYO Semiconductors
DATA SHEET
2SC6096
Applications
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
DC , DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
Adoption of FBET, MBIT process. Hig |
Sanyo Semicon Device |
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| 2SC5352 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5352
Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications
2SC5352
Unit: mm
Excellent switching times: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 4 A)
High breakdown voltage: VCEO = 400 V
Maximu |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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