2SC5207Aの購入情報と機能
| この部品の機能は「SILICON NPN TRIPLE DIFFUSED PLANAR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5207A Transistor | SILICON NPN TRIPLE DIFFUSED PLANAR This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
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Hitachi Semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC5589 | NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY/ COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) 2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
l High Voltage l Low Saturation Voltage l High Speed
: VCBO = 1500 V : VCE (sat) = 3 V (Max.) : tf (2) = 0.1 s ( |
 Toshiba Semiconductor |
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| 2SC783 | SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR Radio(AC100 ~120V)
~7>間電流 直流三て;'::J i~ 4i
-65 ~ 1 50
TB-~3
Gp
一一 CO~l~lON
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 ETC |
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| 2SC5417 | Inverter Lighting Applications Ordering number : EN5817
NPN Triple Diffused Planar Silicon Transistor
2SC5417
Inverter Lighting Applications
Features
High breakdown voltage. High reliability (Adoption of HVP process). Adoption of MBIT process.
Package Dimensions
unit: mm 2079B-TO220FI (LS)
[2SC5417]
10.0 3.5 3.2 7.2 4.5 2. |
 Sanyo Semicon Device |
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| 2SC5550 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5550
High-Speed Switching Application for Inverter Lighting System
2SC5550
Unit: mm
Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA)
High speed: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 0.24 A) High bre |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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