2SC5075の購入情報と機能
| この部品の機能は「Silicon NPN Triple Diffused Type TRANSISTOR」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5075 Transistor | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5075
2SC5075
Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications
Industrial Applications Unit: mm
High-speed switching: tr = 1.0 μs (max), tf = 1.0 μs (max) High breakdown voltage: VCEO = 4 |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC6010 | Silicon NPN Triple Diffused Transistor High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications High speed switching: tf = 0.24μs (max) (IC = 0.3A) |
 Toshiba |
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| 2SC2838 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2838
DESCRIPTION ·With MT-200 package ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applicat |
 Savant |
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| 2SC5761 | NPN SiGe RF TRANSISTOR
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5761
NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
Ideal for low noise high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GH- Maximum stable power gain |
 NEC |
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| 2SC2631 | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SA1123
5.0±0.2
5.1±0.2
Unit: mm
4.0±0.2
s Features
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base vo |
 Panasonic Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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