2SC4809の購入情報と機能
| この部品の機能は「Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC4809 Transistor | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) Transistor
2SC4809
Silicon NPN epitaxial planer type
For high-frequency amplification, oscillation, mixing
Unit: mm
1.6±0.15
s Features
q q
0.4
0.8±0.1
0.4
0.2 0.05 0.15 0.05
+0.1
q
High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacit |
Panasonic Semiconductor |
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| 2SC4809 Transistor | Transistors (Selection Guide by Applications and Functions) |
Panasonic Semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC2148 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noi |
 NEC |
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| 2SC3474 | Silicon NPN Epitaxial Type TRANSISTOR 2SC3474
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3474
Switching Applications Solenoid Drive Applications
Industrial Applications Unit: mm
· High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
Maximum Ratings (Ta = 25°C)
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 Toshiba Semiconductor |
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| 2SC4827 | PNP/NPN Epitaxial Planar Silicon Transistor Ordering number:EN4717
PNP, NPN Epitaxial Planar Silicon Transistor
2SA1853, 2SC4827
High Definition CRT Display Video Output Applications
Applications
· High-definition CRT display video output. Wideband amplifier.
Features
· Adoption of FBET process. · High fT : fT=300MHz. · High breakdown v |
 Sanyo Semicon Device |
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| 2SC1847 | Silicon NPN epitaxial planar type Power Transistors
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0886
φ 3.16±0.1 8.0+0.5 0.1
Unit: mm
3.2±0.2
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitte |
Panasonic Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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