2SC4755の購入情報と機能
| この部品の機能は「Silicon NPN epitaxial planer type(For high speed switching)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC4755 Transistor | Silicon NPN epitaxial planer type(For high speed switching) Transistor
2SC4755
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
2.1±0.1
s Features
q q q
0.425
1.25±0.1
0.425
High-speed switching. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion |
Panasonic Semiconductor |
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| 2SC4755 Transistor | Silicon NPN Epitaxial Planar Type |
Guangdong Kexin |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC2209 | Silicon NPN epitaxial planar type Power Transistors
2SC2209
Silicon NPN epitaxial planar type
For low-frequency power amplification Complementary to 2SA0963 - Features
Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with 2SA0963
7.5+0.5 0.1 120°
2.3±0.2 3.8±0.3 11.0±0.5
Unit: mm
2. |
Panasonic Semiconductor |
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| 2SC941-R | TRANSISTOR SILICON NPN EPIITAXIAL TYPE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC941TM
2SC941TM
High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
Unit: mm
· Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Maximum Ratings (Ta = 25°C)
Characteristi |
 Toshiba Semiconductor |
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| 2SC1573A | Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification) Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879
Unit: mm
5.9± 0.2 4.9± 0.2
q q
High collector to emitter voltage VCEO. High transition frequency fT.
+0. |
Panasonic Semiconductor |
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| 2SC5463 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5463
2SC5463
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitte |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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